Adaptive Quantization Scheme for Multi-Level Cell NAND Flash Memory
نویسندگان
چکیده
منابع مشابه
Microscopic Bit-Level Wear-Leveling for NAND Flash Memory
By microscopically observing widely used data files, we identified the considerable room for life time improvement in NAND flash memory, which is due to the discovery of a non-uniformity in bit-level data patterns. In an attempt to exploit the discovery, we propose a novel bit-level wear-leveling scheme. Instead of considering only the view of page-level or block-level, we incorporate the nonun...
متن کاملPolar-Coded Forward Error Correction for MLC NAND Flash Memory Polar FEC for NAND Flash Memory
With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied the largest market share of flash memory. With the aggressive memory scaling, however, the reliability decays sharply owing to multiple interferences. Therefor...
متن کاملNAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP
Features • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • READ performance – Random READ: 25μs – Sequential READ: 30ns (3V x8 only) • WRITE performance – PROGRAM PAGE: 300μs (TYP) – BLOCK ERASE: 2ms (TYP) • Endurance: 100,...
متن کاملA Survey of 3D Nand Flash Memory
Nand flash memory is an important part of the electronics products. Over the years scientists and engineers have worked hard to make it faster and cost effective. Recently, there has been a realization that current technologies is not capable of further increasing their capacity and at the same time keep the cost down. Keeping in view this limit and the ever increasing need for Nand flash memor...
متن کاملNAND-Flash: Fast Storage or Slow Memory?
NAND-flash storage is a preferred method to accelerate I/O intensive applications because of its high throughput and fast random-read performance. However, the high cost per GB of flash, relative to magnetic disks, prevents large datacenters from moving their data entirely onto the flash media. Normally, limited amounts of flash is used “in front of” magnetic storage to speed up accesses to the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Journal of Korean Institute of Communications and Information Sciences
سال: 2013
ISSN: 1226-4717
DOI: 10.7840/kics.2013.38c.6.540